IEEE DL Invited Talk - New Channel Materials and Devices Beyond Si CMOS---July 29 am 10:30- 12:00
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If anyone is interested, please feel free to come.
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Date/Time : July 29 (Friday) am 10:30-12:00
Room : 交通大學光復校區工程四館5樓528室
Room 528, Engineering Building 4, NCTU
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Speaker :
Prof. Peter(Peide) Ye
School of Electrical and Computer Engineering, Purdue University, USA
IEEE Fellow
Abstract-
Interface is everything in MOS technology. Most of research in that front can be summarized as metal-semiconductor interface for source/drain contacts and oxide-semiconductor interface for dielectric gating. In this talk, we will review the state-of-the-art technology development in the recent years on III-V and Ge MOS technology by the industrial and academic leaders. Meanwhile, we will also report on some of new progress we made at Purdue University related with these two interfaces including the first GaAs and Ge CMOS circuits demonstration. At or even beyond 5nm node, the device channel must be atomic layer thin to avoid the short channel effects. The emerging 2D materials could be one of the solutions. Interface plays even more important role in these novel materials. We will focus on two 2D semiconducting materials – MoS2 as n-type channel and phosphorene as p-type channel. We will present our newest results on MoS2 with record high drain current and low contact resistance by the substitution doping technique. We will also introduce the unique material properties of the newly pioneered phosphorene and its potential for various device applications.
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Short channel effects arise when the channel length (the distance between the source and drain of a mosfet), is of a similar order of ... ... <看更多>