Invited Webinar of IEEE EDS NCTU Student Branch Chapter
▶Title:
Beyond CMOS: Novel Materials, Emerging Memory and Applications
▶Speaker:
Prof. Ying-Chen “Daphne” Chen, Northern Arizona University
▶Date:
7/30, 2021 (Fri.)
10:00 - 11:30 AM
Microsoft Teams 會議網址: https://reurl.cc/bXqxAd
▶Abstract:
Towards the end of the Moore’s law scaling approaching, there is a need for new device technologies that break the limits of computing performance at the nanoscale while enabling better energy efficiency. We also need to consider a new approach with the new materials and new devices for exploring new paradigms of computing. Among the emerging technologies, emerging memory become the candidates for enabling the highly efficient computing while with nonvolatile effect for information storage applications. This talk aims to introduce the current develop of novel materials and emerging electronics, such as the memristor with mimicking the neural system, 2D materials for flexible electronics, and helix-structured active matters.
▶Short Bio:
Dr. Daphne Chen is the assistant professor in School of Informatics, Computing and Cyber Systems at Northern Arizona University. She received the Ph.D. degree in Electrical and Computer Engineering (ECE) at The University of Texas at Austin in 2019, B.S. and M.S. degree from National Chiao Tung University (Taiwan). Prior to joining NAU, she was the R&D Pathfinding Emerging Memory Engineer at Micron Technology working on emerging memory and future applications. Her primary research focuses on emerging electronics and memory devices for high storage class, new computing, and energy-efficient integrated systems. She was also the recipient of Sandia National Laboratory Research Award 2019, and Rising Stars 2017 in EECS (among 60 recipients worldwide).
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IEEE DL Invited Talk - New Channel Materials and Devices Beyond Si CMOS---July 29 am 10:30- 12:00
.
If anyone is interested, please feel free to come.
.
Date/Time : July 29 (Friday) am 10:30-12:00
Room : 交通大學光復校區工程四館5樓528室
Room 528, Engineering Building 4, NCTU
.
Speaker :
Prof. Peter(Peide) Ye
School of Electrical and Computer Engineering, Purdue University, USA
IEEE Fellow
Abstract-
Interface is everything in MOS technology. Most of research in that front can be summarized as metal-semiconductor interface for source/drain contacts and oxide-semiconductor interface for dielectric gating. In this talk, we will review the state-of-the-art technology development in the recent years on III-V and Ge MOS technology by the industrial and academic leaders. Meanwhile, we will also report on some of new progress we made at Purdue University related with these two interfaces including the first GaAs and Ge CMOS circuits demonstration. At or even beyond 5nm node, the device channel must be atomic layer thin to avoid the short channel effects. The emerging 2D materials could be one of the solutions. Interface plays even more important role in these novel materials. We will focus on two 2D semiconducting materials – MoS2 as n-type channel and phosphorene as p-type channel. We will present our newest results on MoS2 with record high drain current and low contact resistance by the substitution doping technique. We will also introduce the unique material properties of the newly pioneered phosphorene and its potential for various device applications.
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